Recently, the Institute of Electrical Engineering in conjunction with the Chinese Academy of Metrology, National Center for nano science and technology jointly developed the first traceable traceable electron microscopy.
On the basis of high-resolution field emission scanning electron microscope of the electrician, a nanometer-scale high precision displacement stage with laser interferometer ranging is added, and an innovative method of image acquisition using stepping scanning instead of traditional electron beam scanning is proposed. The method can be directly related to the position measurement of the image scanning and laser interferometer to realize the traceability of the sample nanostructure scanning imaging, effectively reduce the magnification fluctuation and the non-linear characteristics of the scanning coil in the nanoscale measurement Of the error, in order to achieve traceability measurement of the sample nanostructures.
The successful development of this device will play an important role in the formulation of China's nanoscale metrology standards, the calibration of scanning electron microscopes and other nanometer size measuring instruments, the calibration of nanoscale standards and standards, and the participation in international length alignment.
Traceable scanning electron microscopy 1um silica microsphere imaging
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